feb.1999 mitsubishi transistor modules QM1000HA-24B high power switching use insulated type outline drawing & circuit diagram dimensions in mm application ac motor controllers, ups, cvcf, dc motor controllers, nc equipment, welders QM1000HA-24B ? i c collector current ...................... 1000a ? v cex collector-emitter voltage ......... 1200v ? h fe dc current gain............................. 750 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 145 9 19 28 27 37 28 8 f 6.5 74 39 73 74 65 65 27 9 163 51 47 25 b e bx c e 16 3 16 3 34 3 34 3?4 2?8 45 50max. 47max. 44.5 42 8 b bx e e c label
feb.1999 symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso ratings 1200 1200 1200 7 1000 1000 7000 50 10000 C40~+150 C40~+125 2500 8.83~10.8 90~110 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 2100 absolute maximum ratings (tj=25 c, unless otherwise noted) parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight unit v v v v a a w a a c c v nm kgcm nm kgcm nm kgcm nm kgcm g mitsubishi transistor modules QM1000HA-24B high power switching use insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 750 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1200v, v eb =2v v cb =1200v, emitter open v eb =7v, collector open i c =1000a, i b =1.33a i c =C1000a (diode forward voltage) i c =1000a, v ce =4.0v v cc =600v, i c =1000a, i b1 =2a, Ci b2 =20a transistor part diode part conductive grease applied typ. max. 8.0 8.0 400 4.0 4.2 1.8 2.5 20 7.0 0.018 0.07 0.01 conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m8 mounting screw m6 b(e) terminal screw m4 bx terminal screw m4 typical value
feb.1999 1000 800 600 400 200 0 012345 t j =25? i b =250ma i b =1.33a i b =4a i b =0.5a 23457 7 5 4 3 2 7 5 4 3 2 23457 t j =25? t j =125? 4 10 3 10 2 10 1 10 2 10 3 10 v ce =4.0v 7 5 4 3 2 7 5 4 3 2 23457 23457 ? 10 v be(sat) v ce(sat) 1 10 0 10 1 10 2 10 3 10 t j =25? t j =125? i b =1.33a 7 5 4 3 2 7 5 4 3 2 2.2 2.6 3.0 3.4 v ce =4v t j =25? 3.8 4.2 ? 10 0 10 1 10 ? 10 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 0 t j =25? t j =125? 0 10 ? 10 1 10 i c =1000a i c =800a i c =600a 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 3457 2 3457 3 10 2 t on v cc =600v ? b2 =20a i b1 =2a 23 t f t j =25? t j =125? t s performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM1000HA-24B high power switching use insulated type
feb.1999 7 5 4 3 2 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 t j =25? t j =125? 1 10 2 10 3 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 ? 10 7 5 3 2 7 5 3 2 7 5 3 2 0.020 0.016 0.012 0.008 0.004 0 23 57 0 10 1 10 ? 10 ? 10 0 10 2400 400 0 0 400 800 1200 200 600 1000 1200 1600 800 2000 t j =125? ? b2 =20a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 t c =25? 2 10 3 10 1 10 0 10 4 10 3 10 2 10 1 10 1ms dc 100? 50? 200? 7 5 3 2 23 57 7 5 3 2 23 23 57 2 10 1 10 0 10 0 10 1 10 t s t f v cc =600v i c =1000a i b1 =2a t j =25? t j =125? 4 4 4 44 non?epetitive collector dissipation second breakdown area z th (jCc) ( c/ w) switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM1000HA-24B high power switching use insulated type
feb.1999 7 5 3 2 7 5 3 2 7 5 3 2 0.10 0.08 0.06 0.04 0.02 0 7 5 3 2 1 10 0 10 0 10 ? 10 ? 10 ? 10 7 5 4 3 2 7 5 4 3 2 0 2000 4000 6000 8000 10000 0 10 1 10 2 10 7 5 4 3 2 7 5 4 3 2 57 2 3457 t j =25? t j =125? t rr i rr q rr 2 10 3 10 ? 10 v cc =600v i b1 =2a ? b2 =20a 2345 7 5 4 3 2 7 5 4 3 2 0 10 1 10 1 10 2 10 3 10 z th (jCc) ( c/ w) t rr ( m s) i rr (a), q rr ( m c) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM1000HA-24B high power switching use insulated type surge collector reverse current Ci csm (a)
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